Title :
Er doped As2S3 photoresist for 3-D direct laser fabrication of 3-D nanostructures
Author :
Wong, Sean ; Von Freymann, Georg ; Fenske, Dieter ; Kiowski, Oliver ; Kappes, Manfred ; Peiris, Frank ; Lindner, Jörg ; Ozin, Geoffrey A. ; Thiel, Michael ; Braun, Markus ; Ledermann, Alexandra ; Wegener, Martin
Author_Institution :
Inst. fur Nanotechnol., Forschungszentrum Karlsruhe in der Helmholtz-Geminshaft, Karlsruhe
Abstract :
We present a novel high-index-of-refraction (2.45) photoresist material based on erbium doped arsenic trisulfide. It shows room temperature photoluminescence at 1.5 microns wavelength, and can directly be used for direct laser writing.
Keywords :
arsenic compounds; erbium; erbium compounds; laser materials processing; nanolithography; nanostructured materials; optical fabrication; optical materials; photoluminescence; photoresists; refractive index; 3D direct laser writing; 3D nanostructures; As2S3:Er; erbium doped arsenic trisulfide; high-index-of-refraction material; laser fabrication; photoluminescence; photoresist material; temperature 293 K to 298 K; wavelength 1.5 mum; Doping; Erbium; Nanostructured materials; Nanostructures; Optical films; Optical materials; Photoluminescence; Refractive index; Resists; Transistors; (160.4236) Nanomaterials; (160.5335) Photosensitive materials; (160.5690) Rare-earth-doped materials;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
