Title :
Impact of random dopant induced statistical variability on inverter switching trajectories and timing variability
Author :
Kamsani, Noor Ain ; Cheng, Binjie ; Roy, Scott ; Asenov, Asen
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
In this paper we study the effect of statistical variability introduced by random discrete dopants on the dynamic behaviour of an inverter at the 45 nm technology generation using statistical circuit simulation. The impact of the variability on switching trajectories and propagation delay are studied using an inverter chain with differing Fan-Out/Fan-In (FO/FI) ratios.
Keywords :
logic circuits; logic gates; statistics; fan-out/fan-in ratios; inverter switching timing variability; inverter switching trajectories variability; random dopant induced statistical variability; statistical circuit simulation; Calibration; Circuit simulation; Circuits and systems; Doping profiles; Inverters; MOSFET circuits; Propagation delay; Semiconductor process modeling; Timing; Voltage;
Conference_Titel :
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-3827-3
Electronic_ISBN :
978-1-4244-3828-0
DOI :
10.1109/ISCAS.2009.5117814
