Title :
Monolithic pyroelectric infrared image sensor using PVDF thin film
Author :
Fujitsuka, Norio ; Sakata, Jiro ; Miyachi, Yukio ; Mizuno, Kentaro ; Ohtsuka, Kazuo ; Taga, Yasunori ; Tabata, Osamu
Author_Institution :
Toyota Central Res. & Dev. Labs. Inc., Aichi, Japan
Abstract :
A 16×16 monolithic pyroelectric infrared image sensor has been developed. The image sensor utilizes an electro-spray (ESP) deposited polyvinylidene fluoride (PVDF) thin film as a pyroelectric material, a buried channel MOSFET as a low noise detection device, and a micromachined four-beams supported membrane as a thermal isolation structure. A voltage sensitivity of 6600 V/W and a detectivity of 1.6×107 cm Hz1/2 W-1 have been realized with a sensing area of 75×75 μm2
Keywords :
electrodeposition; infrared imaging; microsensors; polymer films; pyroelectric devices; 75 micron; PVDF thin film; buried channel MOSFET; detectivity; electro-spray deposition; low noise detection device; micromachined four-beams supported membrane; polyvinylidene fluoride thin film; pyroelectric infrared image sensor; pyroelectric material; sensing area; thermal isolation structure; voltage sensitivity; Biomembranes; Electrostatic precipitators; Image sensors; Infrared image sensors; MOSFET circuits; Pyroelectricity; Sputtering; Thin film devices; Thin film sensors; Voltage;
Conference_Titel :
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-3829-4
DOI :
10.1109/SENSOR.1997.635451
