Monolithic pyroelectric infrared image sensor using PVDF thin film

Author

Fujitsuka, Norio ; Sakata, Jiro ; Miyachi, Yukio ; Mizuno, Kentaro ; Ohtsuka, Kazuo ; Taga, Yasunori ; Tabata, Osamu

Author_Institution

Toyota Central Res. & Dev. Labs. Inc., Aichi, Japan

Volume

2

fYear

1997

fDate

16-19 Jun 1997

Firstpage

1237

Abstract

A 16×16 monolithic pyroelectric infrared image sensor has been developed. The image sensor utilizes an electro-spray (ESP) deposited polyvinylidene fluoride (PVDF) thin film as a pyroelectric material, a buried channel MOSFET as a low noise detection device, and a micromachined four-beams supported membrane as a thermal isolation structure. A voltage sensitivity of 6600 V/W and a detectivity of 1.6×10⁷ cm Hz^1/2 W^-1 have been realized with a sensing area of 75×75 μm²

Keywords

electrodeposition; infrared imaging; microsensors; polymer films; pyroelectric devices; 75 micron; PVDF thin film; buried channel MOSFET; detectivity; electro-spray deposition; low noise detection device; micromachined four-beams supported membrane; polyvinylidene fluoride thin film; pyroelectric infrared image sensor; pyroelectric material; sensing area; thermal isolation structure; voltage sensitivity; Biomembranes; Electrostatic precipitators; Image sensors; Infrared image sensors; MOSFET circuits; Pyroelectricity; Sputtering; Thin film devices; Thin film sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.635451

Filename

635451