Wafer-scale processing, assembly, and testing of tunneling infrared detectors

Author

Grade, John ; Barzilai, Aaron ; Reynolds, J. Kurth ; Liu, Cheng-Hsien ; Partridge, Aaron ; Jerman, Hal ; Kenny, Tom

Author_Institution

Stanford Univ., CA, USA

Volume

2

fYear

1997

fDate

16-19 Jun 1997

Firstpage

1241

Abstract

The individual assembly of early tunneling sensors required time and skill which were incompatible with high volume production and which produced a very large variation in key device operating parameters. This paper describes the first successful fully wafer-scale production of tunneling sensors. The sensors produced in this process feature noise and sensitivity characteristics consistent with the best tunneling sensors developed so far and are appropriate for use as state-of-the-art uncooled infrared detectors

Keywords

infrared detectors; microsensors; semiconductor device noise; tunnelling; wafer-scale integration; high volume production; noise characteristics; sensitivity characteristics; testing; tunneling infrared detectors; uncooled infrared detectors; wafer-scale processing; Assembly; Biomembranes; Fabrication; Infrared detectors; Sensor phenomena and characterization; Silicon; Testing; Transducers; Tunneling; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.635453

Filename

635453