DocumentCode
2252896
Title
A high-swing MOS cascode bias circuit for operation at any current level
Author
Vincence, V.C. ; Montoro, C.G. ; Schneider, M.C.
Author_Institution
Univ. Federal de Santa Catarina, Florianapolis, Brazil
Volume
5
fYear
2000
fDate
2000
Firstpage
489
Abstract
In this paper, we propose a very simple bias circuit that allows for maximum output voltage swing of MOSFET cascode stages. The proposal is valid for any current density and is technology-independent. Starting from the saturation voltage and from the current density of the cascode stage, we determine the aspect ratio of the transistors in the bias circuit in order to maximize the output voltage swing. Experimental results validate the strategy for designing the bias network
Keywords
CMOS analogue integrated circuits; current density; current mirrors; LV design; MOS cascode bias circuit; MOSFET cascode stages; cascode current mirrors; current density; high-swing bias circuit; low voltage design; maximum output voltage swing; technology-independent technique; transistor aspect ratio; Circuit synthesis; Current density; Equations; Frequency; MOSFET circuits; Mirrors; Proposals; Silicon; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location
Geneva
Print_ISBN
0-7803-5482-6
Type
conf
DOI
10.1109/ISCAS.2000.857478
Filename
857478
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