DocumentCode
2253080
Title
Formation of thin film of C- and Ni-silicide by MEVVA implantation
Author
Zhang, Y. ; Whitlow, H.J. ; Zhang, T.
Author_Institution
Dept. of Nucl. Phys., Lund Inst. of Technol., Sweden
fYear
1997
fDate
16-19 March 1997
Firstpage
192
Lastpage
195
Abstract
The behaviours of Co- and Ni-silicide that formed by metal vapour vacuum arc (MEVVA) implantation and subsequent annealing were systematically studied. Rapid thermal annealing (RTA) was suggested to be a promising technique for reducing lateral diffusion.
Keywords
chemical interdiffusion; cobalt compounds; ion implantation; metallic thin films; nickel compounds; rapid thermal annealing; CoSi; MEVVA implantation; NiSi; lateral diffusion; metal silicide; rapid thermal annealing; thin film; Annealing; Atomic measurements; Electrical resistance measurement; Metallization; Nuclear physics; Semiconductor films; Silicides; Temperature; Thermal stability; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location
Villard de Lans, France
ISSN
1266-0167
Type
conf
DOI
10.1109/MAM.1997.621117
Filename
621117
Link To Document