Title :
Piezoelectric membrane acoustic devices
Author :
Sang Choon Ko ; Yong Chul Kim ; Lee, S.S. ; Seung Ho Choi ; Sang Ryong Kim
Author_Institution :
Electron. & Telecommun. Res. Inst., South Korea
Abstract :
This paper reports the 3/spl times/3/spl times/0.003 mm/sup 3/ piezoelectric membrane acoustic device, which works as a microphone and a microspeaker. It has a 0.5 /spl mu/m thick zinc oxide (ZnO) piezoelectric thin film on a 1.5 /spl mu/m thick low stress silicon nitride membrane, made of LPCVD. The maximum deflection in the center of membrane, using laser Doppler vibrometer, is 1 /spl mu/m at 7.3 kHz with input drive 15 V/sub P-K/ (zero-peak). The output sound pressure level (SPL) of microspeaker is 76.3 dB SPL at 7.3 kHz, and 83.1 dB SPL at 13.3 kHz with input drive 15 V. The distance between reference microphone and piezoelectric microspeaker is 1 cm. The sensitivity of microphone is 0.51 mV/Pa at 7.3 kHz with noise level of 18 dB SPL.
Keywords :
CVD coatings; loudspeakers; membranes; microphones; piezoelectric thin films; piezoelectric transducers; zinc compounds; 13.3 kHz; 15 V; 7.3 kHz; MEMS technology; Si/sub 3/N/sub 4/; ZnO; laser Doppler vibrometer; microphone; microspeaker; piezoelectric membrane acoustic device; silicon nitride LPCVD coating; zinc oxide thin film; Acoustic devices; Biomembranes; Drives; Microphones; Piezoelectric devices; Piezoelectric films; Silicon; Stress; Vibrometers; Zinc oxide;
Conference_Titel :
Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-7803-7185-2
DOI :
10.1109/MEMSYS.2002.984261