Q-enhancing technique for rf CMOS active inductor

Author

Yodprasit, U. ; Ngarmnil, J.

Author_Institution

Mahanakorn Univ., Bangkok, Thailand

Volume

5

fYear

2000

fDate

2000

Firstpage

589

Abstract

A design technique for realising a very-high Q CMOS active inductor operating in the RF-band is described in this paper. The proposed active inductor is based on double-feedback transconductor topology in which negative feedback is used to realise inductive input impedance while positive feedback is employed to produce a negative resistance for canceling the inductor loss, hence an enhancing of the Q factor. In order to verify the effectiveness of the proposed technique, a very-high Q (Q>1,000) second-order bandpass filter has been implemented. Simulation results show that the filter exhibits stable Q factor of 12,000, the resonant frequency can be tuned from 1.007 GHz to 1.023 GHz and the input-referred third-order intercept point (IIP3) of -25 dBm (at 1.023 GHz centre frequency and 12,000 Q factor) under a 3.3 V supply voltage

Keywords

CMOS analogue integrated circuits; Q-factor; UHF filters; UHF integrated circuits; active filters; band-pass filters; circuit feedback; inductors; integrated circuit design; 1.007 to 1.023 GHz; 3.3 V; CMOS active inductor; Q-factor; RF design; double-feedback transconductor; input impedance; input-referred third-order intercept point; negative feedback; negative resistance; positive feedback; resonant frequency tuning; second-order bandpass filter; Active inductors; Band pass filters; CMOS technology; Impedance; Negative feedback; Q factor; Resonant frequency; Topology; Transconductors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on

Conference_Location

Geneva

Print_ISBN

0-7803-5482-6

Type

conf

DOI

10.1109/ISCAS.2000.857503

Filename

857503