Title :
Formation of implanted piezoresistors under 100-nm thick for nanoelectromechanical systems
Author :
Bergaud, C. ; Cocheteau, E. ; Bary, L. ; Plana, R. ; Belier, B.
Author_Institution :
Lab. d´Analyse et d´Archit. des Systemes, CNRS, Toulouse, France
Abstract :
Piezoresistors, with a thickness of 90 nm have been obtained by implanting boron fluorine into germanium-preamorphized silicon. Germanium implantation was carried out at a dose of 10/sup 15/ cm/sup -2/ and an energy of 60 keV to form a 80-nm-thick preamorphized layer prior to BF/sub 2/ implantation at a dose of 5 /spl times/ 10/sup 14/ cm/sup -2/ and an energy of 15 keV. The experimental sensitivity is 80% of the theoretical maximum. This shows that the germanium preamorphization step does not impact the sensitivity of the piezoresistors. Moreover, 1/f noise characteristics have been improved compared to those obtained in a previous work without using a preamorphizing implant.
Keywords :
1/f noise; amorphisation; boron compounds; elemental semiconductors; germanium; ion implantation; micromechanical devices; piezoresistive devices; resistors; semiconductor device noise; silicon; 1/f noise; 15 keV; 60 keV; 90 nm; Si:Ge,BF/sub 2/; boron fluoride implantation; germanium preamorphization; nanoelectromechanical system; silicon piezoresistor; Atomic force microscopy; Boron; CMOS technology; Fabrication; Force sensors; Germanium; Nanoelectromechanical systems; Piezoresistance; Piezoresistive devices; Silicon;
Conference_Titel :
Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-7803-7185-2
DOI :
10.1109/MEMSYS.2002.984277
