A novel MEMS silicon probe card

Author

Bong-Hwan Kim ; Sangjun Park ; Byeungleul Lee ; Jong-Ho Lee ; Bong-Gi Min ; Soon-Don Choi ; Dong-il Cho ; Kukjin Chun

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

2002

fDate

24-24 Jan. 2002

Firstpage

368

Lastpage

371

Abstract

We have developed a novel cantilever-type probe which is capable of less than 70 of pitch and 12g of force. This probe is suitable for wafer-level burn-in testing, function testing and circuit-board O/S testing including memory and RF devices. The probe was fabricated with epitaxial polysilicon on silicon substrate. The through via hole interconnection was formed in silicon wafer by nickel electroless plating and copper electroplating. The electroless plating is easy method and can deposit film uniformly for deep trench and through hole. Especially, it can deposit film on any substrates without seed layer and allow it to be electroplated. The aspect ratio of through via hole was larger than 10:1 and the contact resistance was less than 1 ohm.

Keywords

contact resistance; electroless deposited coatings; electroplated coatings; elemental semiconductors; integrated circuit testing; micromechanical devices; probes; silicon; Cu; MEMS probe card; Ni; RF device; Si; aspect ratio; cantilever-type probe; circuit-board O/S testing; contact resistance; copper electroplating; function testing; memory device; nickel electroless plating; polysilicon epitaxial layer; silicon wafer substrate; through via hole interconnection; wafer-level burn-in testing; Circuit testing; Contact resistance; Copper; Integrated circuit interconnections; Micromechanical devices; Nickel; Probes; Radio frequency; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on

Conference_Location

Las Vegas, NV, USA

ISSN

1084-6999

Print_ISBN

0-7803-7185-2

Type

conf

DOI

10.1109/MEMSYS.2002.984279

Filename

984279