What is the metal role on the Fermi-level position at the interface with IV-IV compounds?

Author

Aubry-Fortuna, V. ; Perrossier, J.-L. ; Mamor, M. ; Meyer, F. ; Frojdh, C. ; Thungstrom, G. ; Petersson, C.S. ; Bodnar, S. ; Regolini, J.L.

Author_Institution

Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France

fYear

1997

fDate

16-19 March 1997

Firstpage

207

Lastpage

209

Abstract

The fabrication of IV-IV alloys has generated considerable interest. The possibility of band-gap engineering has made them attractive for devices such as HBTs, MODFETs and also infrared detectors. Recently, it was shown that small amounts of C added to S/sub 1-x/Ge/sub x/ layer can offer the possibility of strain compensation to zero misfit. A tetragonal distortion associated with either a compressive strain (usually present in strained Si/sub 1-x/Ge/sub x/ layer) or a tensile strain is also provided depending on the Ge:C ratio. In this present work, we have investigated the behavior of the Schottky barrier height (SBH) on these IV-IV alloys as a function of the composition of the alloy for different layer thicknesses (above or below the critical thickness), and as a function of the metal used to realize the Schottky contact.

Keywords

Fermi level; Ge-Si alloys; Schottky barriers; energy gap; internal stresses; semiconductor materials; Fermi-level position; HBTs; MODFETs; Schottky barrier height; SiGe; band-gap engineering; compressive strain; infrared detectors; strain compensation; tensile strain; tetragonal distortion; zero misfit; Fabrication; MODFETs; Metallization; Photonic band gap; Schottky barriers; Silicon alloys; Sputtering; Telecommunications; Tensile strain; Titanium alloys;

fLanguage

English

Publisher

ieee

Conference_Titel

Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop

Conference_Location

Villard de Lans, France

ISSN

1266-0167

Type

conf

DOI

10.1109/MAM.1997.621125

Filename

621125