DocumentCode
2253600
Title
Selective plating of nickel ceramic composite films for MEMS applications
Author
Teh, K.S. ; Cheng, Y.T. ; Sambucetti, C.
Author_Institution
Dept. of Mech. Eng., California Univ., Berkeley, CA, USA
fYear
2002
fDate
24-24 Jan. 2002
Firstpage
384
Lastpage
387
Abstract
A simple, selective and CMOS-compatible deposition method for nickel ceramic composite films has been demonstrated. Using an electroless plating technique, two types of nickel ceramic composite thin films, nickel-cordierite and nickel-iron (II, III) oxide, have been successfully deposited and characterized on silicon substrates. The incorporation of an appropriate amount of cordierite particles into a nickel matrix is shown to significantly reduce the thermal expansion mismatch between nickel and silicon, yet maintain the Young´s modulus, Berkovich hardness and electrical resistivity at approximately 167 GPa, 7.6 GPa and 9.4 /spl mu//spl Omega/-cm, respectively, values which correspond closely to electroless nickel. On the other hand, the addition of iron (II, III) oxide instead of cordierite can also increase the coercivity of electroless nickel up to 170 Oe, thereby significantly enhancing its ferromagnetic properties.
Keywords
Young´s modulus; cermets; coercive force; electrical resistivity; electroless deposited coatings; electroless deposition; ferromagnetic materials; hardness; micromechanical devices; nickel; thermal expansion; 9.4 muohmcm; Berkovich hardness; CMOS-compatible deposition method; MEMS applications; Ni; Ni-FeO; Ni-MgAlSiO; Ni/ceramic composite films; Si; Si substrates; Young´s modulus; coercivity; electrical resistivity; electroless plating; ferromagnetic properties; nickel-cordierite; nickel-iron oxide; selective plating; thermal expansion mismatch; Ceramics; Electric resistance; Iron; Micromechanical devices; Nickel; Semiconductor thin films; Silicon; Sputtering; Thermal expansion; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
Conference_Location
Las Vegas, NV, USA
ISSN
1084-6999
Print_ISBN
0-7803-7185-2
Type
conf
DOI
10.1109/MEMSYS.2002.984283
Filename
984283
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