Title :
Heterojunction BiFET technology for high speed electronic systems
Author_Institution :
Rockwell Inst. Sci. Center, Thousand Oaks, CA, USA
Abstract :
A GaAs BiFET LSI technology has been successfully developed for high speed, low power and mixed signal circuit applications. The direct placement of the FET on the HBT emitter cap layer simplifies the device epitaxial growth and process integration. High integration levels and functional circuit yield have been achieved. Excellent HBT and FET characteristics have bean produced, with the noise figure of the FETs comparable to those of traditional MESFETs, enabling them to perform well in front end receiver applications. Through this technology, several LSI circuits, including a 2 Gsps 2-bit prototype DRFM, 2 GHz 32×2 bit shift registers, sample and hold circuits with 9-bit resolution at 200 Msps and SRAMs with ultra-fast access time (330 ps) have been successfully demonstrated
Keywords :
III-V semiconductors; SRAM chips; gallium arsenide; integrated circuit technology; large scale integration; mixed analogue-digital integrated circuits; sample and hold circuits; shift registers; very high speed integrated circuits; 2 GHz; 2 Gbit/s; 200 Mbit/s; 330 ps; DRFM; GaAs; GaAs BiFET LSI technology; HBT emitter cap layer; HBT/MESFET integration; MESFET; SRAMs; device epitaxial growth; front end receiver applications; heterojunction BiFET technology; high speed electronic systems; low power circuit applications; mixed signal circuit applications; sample/hold circuits; shift registers; ultra-fast access time; Circuits; Epitaxial growth; FETs; Gallium arsenide; Heterojunction bipolar transistors; High-speed electronics; Large scale integration; MESFETs; Noise figure; Prototypes;
Conference_Titel :
Frontiers in Electronics, 1997. WOFE '97. Proceedings., 1997 Advanced Workshop on
Conference_Location :
Puerto de la Cruz
Print_ISBN :
0-7803-4059-0
DOI :
10.1109/WOFE.1997.621135
