DocumentCode
2253756
Title
A high performance amorphous Si1-xCx:H thermistor bolometer based on micro-machined structure
Author
Ichihara, Tsutomu ; Watabe, Yoshifumi ; Honda, Yoshiaki ; Aizawa, Kouichi
Author_Institution
Central Res. Lab., Matsushita Electr. Works Ltd., Osaka, Japan
Volume
2
fYear
1997
fDate
16-19 Jun 1997
Firstpage
1253
Abstract
A high performance micro-bridge structured thermistor bolometer of D*=8.0×108 cm Hz1/2/W has been realized without using vacuum packaging. The temperature change in the bolometer was simulated by a newly developed method based on laminar film theory. The calculated values were found to be in excellent agreement with the experimental data. By optimizing deposition parameters of hydrogenated amorphous silicon carbide (a-Si1-xCx:PI) thin film, we have successfully fabricated superior thermistors with a high temperature coefficient of resistance a and low electronic excess noise. The noise dramatically decreases as the amount of Si-CH3 and C-Hn bonds in a-Si1-xCx:H thin films decreases and as the doping level increases
Keywords
amorphous semiconductors; bolometers; hydrogen; infrared detectors; micromachining; microsensors; semiconductor device noise; semiconductor materials; semiconductor thin films; silicon compounds; thermistors; SiC:H; deposition parameters; doping level; excess noise; laminar film theory; micro-bridge structured device; micro-machined structure; semiconductor thin films; temperature coefficient of resistance; thermistor bolometer; Amorphous materials; Amorphous silicon; Bolometers; Noise level; Packaging; Semiconductor thin films; Sputtering; Temperature; Thermal resistance; Thermistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location
Chicago, IL
Print_ISBN
0-7803-3829-4
Type
conf
DOI
10.1109/SENSOR.1997.635462
Filename
635462
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