Electrical modeling and analysis of lead-bonded and wire-bonded μBGA® packages for high-speed memory applications

Lead-bonded μBGA (μBGA^®) and wire-bonded μBGA (μBGA^®-W) packages with flex- and laminate-based substrates have been developed for high-speed memory devices. This work presents the inductance, capacitance, and resistance values for lead-bonded and wire-bonded μBGA packages obtained from simulation study to demonstrate and compare their electrical performance. The effect of the bonding technology (lead or wire bond), die-shrink and the type of substrate material on the electrical performance for the μBGA package was analyzed by simulation. To verify these results, they were compared to the experimentally measured values. In addition, the electrical performance limitation of the μBGA packages was determined by conducting simulation analysis to obtain S-parameters. The bandwidth of the μBGA packages was predicted based on the return loss and insertion loss calculated from the S-parameters.