Low temperature silicon wafer bonding for MEMS applications

Author

Ayon, A.A. ; Zhang, X. ; Turner, K. ; Choi, D. ; Miller, B. ; Nagle, S. ; Spearing, S.M.

Author_Institution

Sony Semicond., San Antonio, TX, USA

fYear

2002

fDate

24-24 Jan. 2002

Firstpage

411

Lastpage

414

Abstract

This paper reports the investigation of low-temperature silicon wafer fusion bonding for MEMS applications. A bonding process utilizing annealing temperatures between 400/spl deg/C and 1100/spl deg/C was characterized. The silicon-silicon bonded interface was analyzed by Infrared Transmission (IT) and Transmission Electron Microscopy (TEM) and the bond strength was quantified by a four-point bending-delamination technique.

Keywords

annealing; elemental semiconductors; micromechanical devices; silicon; transmission electron microscopy; wafer bonding; 400 to 1100 C; MEMS applications; Si; annealing; bond strength; four-point bending-delamination technique; infrared transmission; low-temperature silicon wafer fusion bonding; silicon-silicon bonded interface; transmission electron microscopy; Annealing; Bonding processes; Micromechanical devices; Pulp manufacturing; Semiconductor device manufacture; Silicon; Surface cleaning; Temperature dependence; Transmission electron microscopy; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on

Conference_Location

Las Vegas, NV, USA

ISSN

1084-6999

Print_ISBN

0-7803-7185-2

Type

conf

DOI

10.1109/MEMSYS.2002.984290

Filename

984290