• DocumentCode
    2253869
  • Title

    Study on ultra-thin NEMS cantilevers - high yield fabrication and size-effect on Young´s modulus of silicon

  • Author

    Xinxin Li ; Ono, T. ; Yuelin Wang ; Esashi, M.

  • Author_Institution
    State Key Lab. of Transducer Technol., Shanghai Inst. of Metall., China
  • fYear
    2002
  • fDate
    24-24 Jan. 2002
  • Firstpage
    427
  • Lastpage
    430
  • Abstract
    Presented is a study on ultra-thin silicon cantilevers for nanoelectromechanical systems (NEMS). A single-sided processed fabrication technique is developed for high-yield formation of so thin silicon cantilevers as 12nm, the thinnest single-crystalline-silicon cantilevers reported by now. Attribute to the newly developed fabrication process, during which no any plasma damage is introduced into the silicon thin-film, the ultra-thin cantilevers show ideal mechanical properties including high quality-factor. More important, obvious specimen size effect on Young´s modulus of ultra thin (12-170nm) single-crystalline-silicon film is experimentally obtained by measuring resonant frequency of cantilever-shaped resonators that is constructed with so thin silicon film. Young´s modulus of the cantilevers decreases significantly along with thinning the cantilevers, while surface effect become to play an important role besides bulk effect.
  • Keywords
    Q-factor; Young´s modulus; elemental semiconductors; micromechanical resonators; silicon; 12 to 170 nm; Si; Young´s modulus; fabrication yield; mechanical properties; nanoelectromechanical system; plasma damage; quality factor; resonant frequency; resonator; single crystalline silicon thin film; size effect; ultra-thin NEMS cantilever; Fabrication; Frequency measurement; Mechanical factors; Nanoelectromechanical systems; Plasma measurements; Plasma properties; Semiconductor films; Semiconductor thin films; Silicon; Size measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-7185-2
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2002.984294
  • Filename
    984294