DocumentCode :
2253869
Title :
Study on ultra-thin NEMS cantilevers - high yield fabrication and size-effect on Young´s modulus of silicon
Author :
Xinxin Li ; Ono, T. ; Yuelin Wang ; Esashi, M.
Author_Institution :
State Key Lab. of Transducer Technol., Shanghai Inst. of Metall., China
fYear :
2002
fDate :
24-24 Jan. 2002
Firstpage :
427
Lastpage :
430
Abstract :
Presented is a study on ultra-thin silicon cantilevers for nanoelectromechanical systems (NEMS). A single-sided processed fabrication technique is developed for high-yield formation of so thin silicon cantilevers as 12nm, the thinnest single-crystalline-silicon cantilevers reported by now. Attribute to the newly developed fabrication process, during which no any plasma damage is introduced into the silicon thin-film, the ultra-thin cantilevers show ideal mechanical properties including high quality-factor. More important, obvious specimen size effect on Young´s modulus of ultra thin (12-170nm) single-crystalline-silicon film is experimentally obtained by measuring resonant frequency of cantilever-shaped resonators that is constructed with so thin silicon film. Young´s modulus of the cantilevers decreases significantly along with thinning the cantilevers, while surface effect become to play an important role besides bulk effect.
Keywords :
Q-factor; Young´s modulus; elemental semiconductors; micromechanical resonators; silicon; 12 to 170 nm; Si; Young´s modulus; fabrication yield; mechanical properties; nanoelectromechanical system; plasma damage; quality factor; resonant frequency; resonator; single crystalline silicon thin film; size effect; ultra-thin NEMS cantilever; Fabrication; Frequency measurement; Mechanical factors; Nanoelectromechanical systems; Plasma measurements; Plasma properties; Semiconductor films; Semiconductor thin films; Silicon; Size measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
Conference_Location :
Las Vegas, NV, USA
ISSN :
1084-6999
Print_ISBN :
0-7803-7185-2
Type :
conf
DOI :
10.1109/MEMSYS.2002.984294
Filename :
984294
Link To Document :
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