Infrared imaging arrays using advanced III-V materials and technology

Author

Razeghi, M. ; Kim, J.D. ; Jelen, C. ; Slivken, S. ; Michel, E. ; Mohseini, H. ; Lee, J.J. ; Wojkowski, J. ; Kim, Kwang Soon ; Jeon, H.I. ; Xu, J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA

fYear

1997

fDate

6-11 Jan 1997

Firstpage

57

Lastpage

64

Abstract

Photodetectors operating in the 3-5 and 8-12 μm atmospheric windows are of great importance for applications in infrared (IR) thermal imaging. HgCdTe has been the dominant material system for these applications. However, it suffers from instability and non-uniformity problems over large areas due to high Hg vapor pressure during the material, growth. There has been a lot of interest in the use of heteroepitaxially grown Sb-based alloys, its strained layer superlattices, and GaAs based quantum wells as alternatives to MCT. This interest has been driven by the advanced material growth and processing technology available for the III-V material system

Keywords

III-V semiconductors; epitaxial growth; image sensors; infrared detectors; infrared imaging; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; semiconductor superlattices; 3 to 12 micron; GaAs; GaAs based quantum wells; IR imaging arrays; IR thermal imaging; advanced III-V materials; heteroepitaxially grown Sb-based alloys; material growth; photodetectors; processing technology; strained layer superlattices; thermal imaging; Application software; Gallium arsenide; Hall effect; III-V semiconductor materials; Infrared imaging; Lattices; Optical imaging; Space technology; Substrates; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Frontiers in Electronics, 1997. WOFE '97. Proceedings., 1997 Advanced Workshop on

Conference_Location

Puerto de la Cruz

Print_ISBN

0-7803-4059-0

Type

conf

DOI

10.1109/WOFE.1997.621147

Filename

621147