Title :
Reliability of polycrystalline silicon under long-term cyclic loading
Author :
Bagdahn, J. ; Sharpe, W.N., Jr.
Author_Institution :
Dept. of Mech. Eng., Johns Hopkins Univ., Baltimore, MD, USA
Abstract :
The long-term mechanical behavior of 3.5 /spl mu/m thick and 50 /spl mu/m wide polysilicon tensile specimens under tension-tension cyclic loading was investigated. The initial fracture strength, /spl sigma//sub c/, was 1.1 GPa. If the applied maximum cyclic stress was reduced by about 35% to a value of /spl sigma//sub f/=0.75 GPa, the specimens failed after 10/sup 8/ cycles. No influence of frequency in the range of 50 to 1000 Hz was observed.
Keywords :
elemental semiconductors; fatigue; fracture toughness; reliability; silicon; 50 to 1000 Hz; MEMS material; Si; fracture strength; long-term mechanical characteristics; polycrystalline silicon; reliability; tension-tension cyclic loading; Fatigue; Frequency; Humidity; Optical materials; Rough surfaces; Silicon; Surface cracks; Surface roughness; Tensile stress; Testing;
Conference_Titel :
Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-7803-7185-2
DOI :
10.1109/MEMSYS.2002.984299
