DocumentCode
2254033
Title
The effect of injection barrier thickness and doping level on a λ ∼ 8 μm quantum cascade structure
Author
Howard, Scott S. ; Howard, Daniel P. ; Ko, Tiffany ; Sivco, Deborah L. ; Gmachl, Claire F.
Author_Institution
Dept. of Electr. Eng., Princeton Univ., Princeton, NJ
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
For a high-performance quantum cascade laser structure, a 50% reduction in doping level and 33% reduction in injection barrier thickness yields 5 times stronger luminescence, 20% smaller optical transition width, and improved current-voltage characteristics.
Keywords
laser beams; laser transitions; optical materials; photoluminescence; quantum cascade lasers; semiconductor doping; current-voltage characteristics; doping level; high-performance quantum cascade laser structure; injection barrier thickness; luminescence; optical transition width; Current-voltage characteristics; Doping; Energy states; Laser transitions; Luminescence; Optical design; Pulse measurements; Quantum cascade lasers; Semiconductor lasers; Temperature; (140.3070) Infrared and far-infrared lasers; (140.5965) Semiconductor lasers, quantum cascade;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4572220
Link To Document