Title :
Bandgap reference with curvature corrected compensation using subthreshold MOSFETs
Author :
Adl, Ahmad-Hossein ; El-Sankary, Kamal ; El-Masry, Ezz
Author_Institution :
Dept. of Elec. & Comp. Eng., Dalhousie Univ., Halifax, NS, Canada
Abstract :
A bandgap reference with curvature corrected compensation which utilizes the subtraction of currents generated from complementary NMOS and PMOS bandgaps using MOS transistors in subthreshold is presented. A transimpedance amplifier with accurate input current compensation is used to overcome the problems due to input common range limitations of operational amplifiers. The bandgap reference uses power supply of 0.8 V, the accuracy is 19 ppm/K for 386 mV in the temperature range of 0 to 130 C. The PSRR is 24 dB for 1 kHz and 23 dB for 10 kHz.
Keywords :
MOSFET; compensation; operational amplifiers; NMOS bandgaps; PMOS bandgaps; bandgap reference; curvature corrected compensation; operational amplifiers; subthreshold MOSFET; temperature 0 C to 130 C; transimpedance amplifier; voltage 0.8 V; Analog circuits; Bipolar transistors; Low voltage; MOS devices; MOSFETs; Operational amplifiers; Photonic band gap; Power supplies; Temperature distribution; Threshold voltage;
Conference_Titel :
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-3827-3
Electronic_ISBN :
978-1-4244-3828-0
DOI :
10.1109/ISCAS.2009.5117880
