Bandgap reference with curvature corrected compensation using subthreshold MOSFETs

Author

Adl, Ahmad-Hossein ; El-Sankary, Kamal ; El-Masry, Ezz

Author_Institution

Dept. of Elec. & Comp. Eng., Dalhousie Univ., Halifax, NS, Canada

fYear

2009

fDate

24-27 May 2009

Firstpage

812

Lastpage

815

Abstract

A bandgap reference with curvature corrected compensation which utilizes the subtraction of currents generated from complementary NMOS and PMOS bandgaps using MOS transistors in subthreshold is presented. A transimpedance amplifier with accurate input current compensation is used to overcome the problems due to input common range limitations of operational amplifiers. The bandgap reference uses power supply of 0.8 V, the accuracy is 19 ppm/K for 386 mV in the temperature range of 0 to 130 C. The PSRR is 24 dB for 1 kHz and 23 dB for 10 kHz.

Keywords

MOSFET; compensation; operational amplifiers; NMOS bandgaps; PMOS bandgaps; bandgap reference; curvature corrected compensation; operational amplifiers; subthreshold MOSFET; temperature 0 C to 130 C; transimpedance amplifier; voltage 0.8 V; Analog circuits; Bipolar transistors; Low voltage; MOS devices; MOSFETs; Operational amplifiers; Photonic band gap; Power supplies; Temperature distribution; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on

Conference_Location

Taipei

Print_ISBN

978-1-4244-3827-3

Electronic_ISBN

978-1-4244-3828-0

Type

conf

DOI

10.1109/ISCAS.2009.5117880

Filename

5117880