• DocumentCode
    2254142
  • Title

    Area efficient 2n× switched capacitor charge pump

  • Author

    Wong, Oi-Ying ; Tam, Wing-Shan ; Kok, Chi-Wah ; Wong, Hei

  • Author_Institution
    Dept. of Electron. Eng., City Univ. of Hong Kong, Hong Kong, China
  • fYear
    2009
  • fDate
    24-27 May 2009
  • Firstpage
    820
  • Lastpage
    823
  • Abstract
    An area efficient switched capacitor charge pump based 2ntimes voltage converter constructed by cascading n units of identical cells with cross-coupled charge pump is proposed and is implemented with a boosting dynamic circuit to provide level shifting. The proposed charge pump can be implemented using standard high-voltage CMOS process. Simulation result of a 4times charge pump based on 0.35 mum CMOS technology is presented to demonstrate the effectiveness of the proposed circuit.
  • Keywords
    CMOS integrated circuits; charge pump circuits; power convertors; switched capacitor networks; CMOS; boosting dynamic circuit; level shifting; switched capacitor charge pump; voltage converter; Boosting; CMOS process; CMOS technology; Charge pumps; Clocks; Power transistors; Switched capacitor circuits; Switching circuits; Switching converters; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4244-3827-3
  • Electronic_ISBN
    978-1-4244-3828-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.2009.5117882
  • Filename
    5117882
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2254142