DocumentCode :
2254142
Title :
Area efficient 2n× switched capacitor charge pump
Author :
Wong, Oi-Ying ; Tam, Wing-Shan ; Kok, Chi-Wah ; Wong, Hei
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Hong Kong, China
fYear :
2009
fDate :
24-27 May 2009
Firstpage :
820
Lastpage :
823
Abstract :
An area efficient switched capacitor charge pump based 2ntimes voltage converter constructed by cascading n units of identical cells with cross-coupled charge pump is proposed and is implemented with a boosting dynamic circuit to provide level shifting. The proposed charge pump can be implemented using standard high-voltage CMOS process. Simulation result of a 4times charge pump based on 0.35 mum CMOS technology is presented to demonstrate the effectiveness of the proposed circuit.
Keywords :
CMOS integrated circuits; charge pump circuits; power convertors; switched capacitor networks; CMOS; boosting dynamic circuit; level shifting; switched capacitor charge pump; voltage converter; Boosting; CMOS process; CMOS technology; Charge pumps; Clocks; Power transistors; Switched capacitor circuits; Switching circuits; Switching converters; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-3827-3
Electronic_ISBN :
978-1-4244-3828-0
Type :
conf
DOI :
10.1109/ISCAS.2009.5117882
Filename :
5117882
Link To Document :
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