DocumentCode
2254162
Title
CMOS integrated infrared sensor
Author
Chang, David T. ; Chen, David M. ; Lin, Felice H. ; Kaiser, William J. ; Stafsudd, Oscar M.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume
2
fYear
1997
fDate
16-19 Jun 1997
Firstpage
1259
Abstract
CMOS integrated microsensors (CIMS) technology has been developed that combines bulk micromachining, pyroelectric materials and a commercial CMOS process to provide an integrated infrared sensor. This sensor system is based on a new sol-gel derived thin film fabricated on thin silicon micro electromechanical structure. The sensor has a peak responsivity of 2.33 V/W and a thermal time constant of 300 ms
Keywords
CMOS integrated circuits; infrared detectors; micromachining; microsensors; pyroelectric detectors; sol-gel processing; 300 ms; CMOS integrated microsensors; bulk micromachining; integrated infrared sensor; microelectromechanical structure; peak responsivity; pyroelectric materials; sol-gel derived thin film; thermal time constant; CMOS process; CMOS technology; Computer integrated manufacturing; Infrared sensors; Micromachining; Microsensors; Pyroelectricity; Semiconductor thin films; Sensor systems; Thin film sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location
Chicago, IL
Print_ISBN
0-7803-3829-4
Type
conf
DOI
10.1109/SENSOR.1997.635464
Filename
635464
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