DocumentCode
2254464
Title
Investigation of blueshift of photoluminescence emission peak in InGaN/GaN multiple quantum wells
Author
Xu, Guibao ; Sun, Guan ; Ding, Yujie J. ; Zhao, Hongping ; Liu, Guangyu ; Zhang, Jing ; Tansu, Nelson
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
We have observed peculiar behaviors on the dependence of photoluminescence emission peak on excitation fluence in InGaN/GaN multiple quantum wells.
Keywords
III-V semiconductors; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; spectral line shift; wide band gap semiconductors; InGaN-GaN; InGaN-GaN multiple quantum wells; blueshift; excitation fluence; photoluminescence emission peak; Electric fields; Gallium nitride; Photoluminescence; Photonic band gap; Quantum well devices; Temperature distribution; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5951205
Link To Document