• DocumentCode
    2254494
  • Title

    Below bandgap excitation of SnO2 nanowires: The relaxation of trap states

  • Author

    Chi, S.-H. ; Mazeina, L. ; Prokes, S.M. ; Caldwell, J.D. ; Beadie, G. ; Flom, S.R. ; Shirk, J.S.

  • Author_Institution
    Opt. Sci. Div., Naval Res. Lab., Washington, DC, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Carrier relaxation of SnO2 nanowires is investigated by excitation at 3.2 eV, ~0.4 eV below the bandgap. The excited state transmission spectrum from 1.9-2.7 eV is intensity dependent and recovers uniformly with a biexponential relaxation route.
  • Keywords
    IV-VI semiconductors; carrier relaxation time; electron traps; energy gap; hole traps; nanowires; tin compounds; wide band gap semiconductors; SnO2; below bandgap excitation; biexponential relaxation route; carrier relaxation; electron volt energy 1.9 eV to 2.7 eV; electron volt energy 3.2 eV; excited state transmission spectrum; tin oxide nanowires; trap state relaxation; Absorption; Energy measurement; Kinetic theory; Laboratories; Nanowires; Photonic band gap; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5951206
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2254494