DocumentCode
2254574
Title
A resilience roadmap
Author
Nassif, Sani R. ; Mehta, Nikil ; Cao, Yu
Author_Institution
Austin Res. Lab., IBM Corp., Austin, TX, USA
fYear
2010
fDate
8-12 March 2010
Firstpage
1011
Lastpage
1016
Abstract
Technology scaling has an increasing impact on the resilience of CMOS circuits. This outcome is the result of (a) increasing sensitivity to various intrinsic and extrinsic noise sources as circuits shrink, and (b) a corresponding increase in parametric variability causing behavior similar to what would be expected with hard (topological) faults. This paper examines the issue of circuit resilience, then proposes and demonstrates a roadmap for evaluating fault rates starting at the 45 nm and going down to the 12 nm nodes. The complete infrastructure necessary to make these predictions is placed in the open source domain, with the hope that it will invigorate research in this area.
Keywords
CMOS integrated circuits; fault location; integrated circuit noise; integrated circuit technology; CMOS circuits; extrinsic noise sources; fault rates; hard faults; intrinsic noise sources; open source domain; resilience roadmap; technology scaling; CMOS logic circuits; CMOS technology; Circuit faults; Circuit noise; Circuit topology; Latches; Pulse inverters; Random access memory; Resilience; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2010
Conference_Location
Dresden
ISSN
1530-1591
Print_ISBN
978-1-4244-7054-9
Type
conf
DOI
10.1109/DATE.2010.5456958
Filename
5456958
Link To Document