• DocumentCode
    2254574
  • Title

    A resilience roadmap

  • Author

    Nassif, Sani R. ; Mehta, Nikil ; Cao, Yu

  • Author_Institution
    Austin Res. Lab., IBM Corp., Austin, TX, USA
  • fYear
    2010
  • fDate
    8-12 March 2010
  • Firstpage
    1011
  • Lastpage
    1016
  • Abstract
    Technology scaling has an increasing impact on the resilience of CMOS circuits. This outcome is the result of (a) increasing sensitivity to various intrinsic and extrinsic noise sources as circuits shrink, and (b) a corresponding increase in parametric variability causing behavior similar to what would be expected with hard (topological) faults. This paper examines the issue of circuit resilience, then proposes and demonstrates a roadmap for evaluating fault rates starting at the 45 nm and going down to the 12 nm nodes. The complete infrastructure necessary to make these predictions is placed in the open source domain, with the hope that it will invigorate research in this area.
  • Keywords
    CMOS integrated circuits; fault location; integrated circuit noise; integrated circuit technology; CMOS circuits; extrinsic noise sources; fault rates; hard faults; intrinsic noise sources; open source domain; resilience roadmap; technology scaling; CMOS logic circuits; CMOS technology; Circuit faults; Circuit noise; Circuit topology; Latches; Pulse inverters; Random access memory; Resilience; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design, Automation & Test in Europe Conference & Exhibition (DATE), 2010
  • Conference_Location
    Dresden
  • ISSN
    1530-1591
  • Print_ISBN
    978-1-4244-7054-9
  • Type

    conf

  • DOI
    10.1109/DATE.2010.5456958
  • Filename
    5456958