DocumentCode
2254649
Title
160 /spl times/ 120 pixels optically readable bimaterial infrared detector
Author
Ishizuya, T. ; Suzuki, J. ; Akagawa, K. ; Kazama, T.
Author_Institution
Photonics Technol. Dept., Nikon Corp., Tokyo, Japan
fYear
2002
fDate
24-24 Jan. 2002
Firstpage
578
Lastpage
581
Abstract
We have been studying the "Optically Readable Bimaterial Infrared Detector" based on surface micro-machining wafer process technology to realize an inexpensive infrared camera. This paper reports that we have developed a detector by incorporating the new "Cancel Structure" and we have successfully obtained an infrared image without a thermo-electric (TE) cooler.
Keywords
CCD image sensors; infrared imaging; micro-optics; 120 pixel; 160 pixel; 19200 pixel; CCD output voltage; MEMS technology; angle changing rate; cancel structure; cancel-bimaterial beam; infrared absorption; infrared camera; infrared image; infrared responsivity; optical read-out system; optically readable bimaterial infrared detector; sensor-bimaterial beam; surface micro-machining wafer process technology; thermal isolator; Cameras; Infrared detectors; Infrared imaging; Infrared sensors; Optical films; Optical sensors; Radiation detectors; Substrates; Tellurium; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
Conference_Location
Las Vegas, NV, USA
ISSN
1084-6999
Print_ISBN
0-7803-7185-2
Type
conf
DOI
10.1109/MEMSYS.2002.984337
Filename
984337
Link To Document