DocumentCode
2254653
Title
Enhanced photoluminescence excitation in surface plasmon coupling with an InGaN/GaN quantum well
Author
Lu, Yen-Cheng ; Chen, Cheng-Yen ; Shen, Kun-Ching ; Yeh, Dong-Ming ; Tang, Tsung-Yi ; Yang, C.C.
Author_Institution
Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
We observe the enhancement of photoluminescence excitation through the coupling of an InGaN/GaN quantum well (QW) with surface plasmons which are generated on an Ag nanostructure deposited on the SiN-coated QW epitaxial sample.
Keywords
III-V semiconductors; gallium compounds; indium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor quantum wells; surface plasmons; Ag; Ag nanostructure; InGaN-GaN; InGaN/GaN quantum well; SiN; SiN-coated QW epitaxial sample; enhanced photoluminescence excitation; surface plasmon coupling; Absorption; Coatings; Gallium nitride; Nanoscale devices; Optical coupling; Photoluminescence; Photonics; Plasmons; Silicon compounds; Wavelength measurement; 230.5590 Quantum-well devices; 240.6680 Surface plasmons;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4572246
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