Nanophotonic gate operation using near-field energy transfer between InAs quantum dots

Author

Nishibayashi, Kazuhiro ; Yamamoto, Takumi ; Kawazoe, Tadashi ; Akahane, Kouichi ; Yamamoto, Naokatsu ; Ohtsu, Motoichi

Author_Institution

Dept. of Electron. Eng., Univ. of Tokyo, Tokyo

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

We demonstrated nanophotonic gate operation of coupled InAs quantum dots using the pump-and-probe micro-photoluminescence measurement. The result indicates that we can select either AND- or NOT-gate operation by controlling the pulse intensity.

Keywords

III-V semiconductors; indium compounds; integrated optoelectronics; nanoelectronics; optical control; optical logic; optical materials; photoluminescence; semiconductor quantum dots; AND-gate operation; InAs; NOT-gate operation; coupled quantum dots; nanophotonic gate operation; near-field energy transfer; pulse intensity control; pump-and-probe micro-photoluminescence measurement; Energy exchange; Gallium arsenide; III-V semiconductor materials; Nanoscale devices; Optical devices; Optical pumping; Pump lasers; Quantum dots; Radiative recombination; Size control; (230. 3990) Microstructure devices; (999.9999) Optical Near Field;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572248