Single crystal silicon micromachined pulsed infrared light source

Author

Yuasa, Hiroyasu ; Ohya, Seishiro ; Karasawa, Shiro ; Akimoto, Kenji ; Kodato, Setsuo ; Takahashi, Kiyoshi

Author_Institution

Kanagawa Ind. Technol. Res. Inst., Japan

Volume

2

fYear

1997

fDate

16-19 Jun 1997

Firstpage

1271

Abstract

We have newly developed a single crystal silicon micromachined pulsed infrared light source, with a microbridge. The chip size is 2×1×0.35 mm³. The microbridge size is 365×85×1.5 μm³. We can easily control the temperature of silicon microbridge by pulsed electric signal up to the frequency range of 2 kHz. The modulated temperature is more than 700°C at 100 Hz and 100°C at 2 kHz. The thermal time constant is 0.4 msec. We measured transient temperature distribution of microbridge. We estimate performance of infrared light source from these results

Keywords

elemental semiconductors; etching; infrared sources; light sources; micromachining; microsensors; silicon; temperature distribution; 0.4 ms; 100 Hz to 2 kHz; 100 to 700 degC; Si:B; microbridge; micromachining; microsensors; pulsed electric signal; pulsed infrared light source; thermal time constant; transient temperature distribution; Anisotropic magnetoresistance; Boron; Electrodes; Etching; Gas detectors; Ion implantation; Light sources; Silicon; Temperature distribution; Thermal sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.635467

Filename

635467