Title :
A copper CMOS-MEMS Z-axis gyroscope
Author :
Hao Luo ; Xu Zhu ; Lakdawala, H. ; Carley, L.R. ; Fedder, G.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Abstract :
This paper reports the first thin film Z-axis gyroscope fabricated in a copper CMOS-MEMS process. It works at an ambient pressure of 1 atm and does not depend on Q enhancement. The sensor is integrated with the conditioning circuits in a commercial low-k digital copper CMOS process. The benefit of the copper CMOS-MEMS process includes high mass density and low stress. The device was fabricated in the UMC 0.18 /spl mu/m six copper layer CMOS process with dimensions of 410 /spl mu/m by 330 /spl mu/m. It consists of an outer rigid vibrating frame and an inner accelerometer to detect the Coriolis force. Measured driving mode resonant frequency is 8.8 kHz, the sensitivity is 0.8 gV//spl deg//sec and the noise floor is 0.5/spl deg//sec//spl radic/(Hz).
Keywords :
CMOS integrated circuits; accelerometers; capacitive sensors; copper; gyroscopes; integrated circuit metallisation; integrated circuit noise; micromachining; micromechanical resonators; microsensors; signal processing equipment; 0.18 micron; 1 atm; 330 micron; 410 micron; 8.8 kHz; Coriolis force detection; Cu CMOS-MEMS process Z-axis gyroscope; Cu-Si; Si; UMC 0.18 /spl mu/m six copper layer CMOS process; ambient pressure; driving mode resonant frequency; high mass density; inner accelerometer; integrated conditioning circuits; low stress; low-k digital copper CMOS process; micromachined capacitive gyroscopes; noise floor; outer rigid vibrating frame; sensitivity; Aluminum; CMOS process; CMOS technology; Circuits; Copper; Etching; Gyroscopes; Parasitic capacitance; Silicon; Stress;
Conference_Titel :
Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-7803-7185-2
DOI :
10.1109/MEMSYS.2002.984350
