A high-performance MEMS transformer for silicon RF ICS

Author

Yun-Seok Choi ; Jun-Bo Yoon ; Byeong-Il Kim ; Euisik Yoon

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

fYear

2002

fDate

24-24 Jan. 2002

Firstpage

653

Lastpage

656

Abstract

A new spiral-type suspended transformer for silicon radio frequency integrated circuits (RF ICs) has been fabricated by surface micromachining technology The fabricated transformer on standard silicon substrate has shown a low insertion loss of 1.9 dB at 1 GHz by reducing substrate coupling and ohmic loss using the proposed MEMS technology. Equivalent circuit models for the spiral-type suspended transformer have been extracted and shown that they agree well with measured characteristics.

Keywords

elemental semiconductors; equivalent circuits; micromachining; micromechanical devices; radio equipment; silicon; substrates; transformers; 1 GHz; 1.9 dB; MEMS; Si; Si RF ICs; Si substrate; equivalent circuit; insertion loss 1.9dB; ohmic loss; spiral-type suspended transformer; substrate coupling; surface micromachining; Coils; Conductivity; Insertion loss; Integrated circuit technology; Magnetic flux; Micromechanical devices; Power transformer insulation; Radio frequency; Radiofrequency integrated circuits; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on

Conference_Location

Las Vegas, NV, USA

ISSN

1084-6999

Print_ISBN

0-7803-7185-2

Type

conf

DOI

10.1109/MEMSYS.2002.984355

Filename

984355