DocumentCode :
2255000
Title :
A charge pump that generates positive and negative high voltages with low power-supply voltage and low power consumption for non-volatile memories
Author :
Yamazoe, Takanori ; Ishida, Hisanobu ; Nihongi, Yasutaka
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Tokyo, Japan
fYear :
2009
fDate :
24-27 May 2009
Firstpage :
988
Lastpage :
991
Abstract :
A charge pump that generates positive and negative high voltages with low power-supply voltage and low power consumption was developed. By controlling the body and gate voltage of each transfer HVNMOS, high output voltage can be obtained from a low power-supply voltage. For low power consumption, the clock frequency of the charge pump is varied according to its output voltage. Output voltages of a seven-stage negative charge pump and a five-stage positive charge pump, fabricated with a 0.15-mum CMOS process, were measured. These measurements show that the developed charge pump achieves the target regulation positive high voltage (+6.5 V) and negative high voltage (-6 V) at low power-supply voltage Vdd of 1.5 V while also achieving low power consumption.
Keywords :
CMOS integrated circuits; charge pump circuits; low-power electronics; random-access storage; CMOS process; HVNMOS; charge pump; clock frequency; low power consumption; low power-supply voltage; nonvolatile memories; Charge measurement; Charge pumps; Clocks; Current measurement; Energy consumption; Frequency; Low voltage; Nonvolatile memory; Power generation; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-3827-3
Electronic_ISBN :
978-1-4244-3828-0
Type :
conf
DOI :
10.1109/ISCAS.2009.5117924
Filename :
5117924
Link To Document :
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