• DocumentCode
    2255000
  • Title

    A charge pump that generates positive and negative high voltages with low power-supply voltage and low power consumption for non-volatile memories

  • Author

    Yamazoe, Takanori ; Ishida, Hisanobu ; Nihongi, Yasutaka

  • Author_Institution
    Central Res. Lab., Hitachi, Ltd., Tokyo, Japan
  • fYear
    2009
  • fDate
    24-27 May 2009
  • Firstpage
    988
  • Lastpage
    991
  • Abstract
    A charge pump that generates positive and negative high voltages with low power-supply voltage and low power consumption was developed. By controlling the body and gate voltage of each transfer HVNMOS, high output voltage can be obtained from a low power-supply voltage. For low power consumption, the clock frequency of the charge pump is varied according to its output voltage. Output voltages of a seven-stage negative charge pump and a five-stage positive charge pump, fabricated with a 0.15-mum CMOS process, were measured. These measurements show that the developed charge pump achieves the target regulation positive high voltage (+6.5 V) and negative high voltage (-6 V) at low power-supply voltage Vdd of 1.5 V while also achieving low power consumption.
  • Keywords
    CMOS integrated circuits; charge pump circuits; low-power electronics; random-access storage; CMOS process; HVNMOS; charge pump; clock frequency; low power consumption; low power-supply voltage; nonvolatile memories; Charge measurement; Charge pumps; Clocks; Current measurement; Energy consumption; Frequency; Low voltage; Nonvolatile memory; Power generation; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4244-3827-3
  • Electronic_ISBN
    978-1-4244-3828-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.2009.5117924
  • Filename
    5117924