• DocumentCode
    2255069
  • Title

    High-frequency high-Q micro-mechanical resonators in thick epipoly technology with post-process gap adjustment

  • Author

    Galayko, D. ; Kaiser, A. ; Legrand, B. ; Collard, D. ; Buchaillot, L. ; Combi, C.

  • Author_Institution
    IEMN-ISEN, Lille, France
  • fYear
    2002
  • fDate
    24-24 Jan. 2002
  • Firstpage
    665
  • Lastpage
    668
  • Abstract
    This paper presents high-Q high-frequency lateral-mode clamped-clamped beam micro-resonators driven by parallel-plate electrostatic transducers fabricated in a thick epipoly micromachining technology. An innovative approach is employed to reduce an intrinsically high transducer gap value of more then 3.0 /spl mu/m (determined by the need of 15 /spl mu/m thickness structural layer etching) down to 0.2-0.4 /spl mu/m after the fabrication. This is achieved by employing an electrostatic motor that approaches actuating and sensing electrodes close to the resonator. The electrode motor is driven with 30 V DC voltage, without any DC current consumption. Two resonators having a resonance frequency of 10 MHz have been fabricated with gap values of respectively 0.2 and 0.4 /spl mu/m. A comparative analysis of performances of the two resonators is given in the paper.
  • Keywords
    electrostatic motors; integrated circuit technology; micromechanical resonators; 0.2 micron; 0.2-0.4 /spl mu/m thickness; 0.4 micron; 10 MHz; 15 /spl mu/m thickness; 15 micron; 30 V; 30 V DC voltage; Si; comparative analysis; dry etching; electrostatic motor; lateralmode clamped-clamped beam micro-resonators; parallel-plate electrostatic transducers; polysilicon; resonance frequency 10 MHz; structural layer etching; thick epipoly micromachining; DC motors; Electrodes; Electrostatics; Etching; Fabrication; Micromachining; Resonance; Resonant frequency; Transducers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-7185-2
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2002.984358
  • Filename
    984358