• DocumentCode
    2255080
  • Title

    A high Q, large tuning range, tunable capacitor for RF applications

  • Author

    Borwick, R.L. ; Stupar, P.A. ; DeNatale, J. ; Anderson, R. ; Chialun Tsai ; Garrett, K.

  • Author_Institution
    Rockwell Sci. Co., Thousand Oaks, CA, USA
  • fYear
    2002
  • fDate
    24-24 Jan. 2002
  • Firstpage
    669
  • Lastpage
    672
  • Abstract
    Using a new, double-sided adhesive process, an analog tunable capacitor has been designed and fabricated with an extremely large tuning range and a high Q. New design components such as two-sided metal deposition, low resistivity silicon, thicker device layers, and double beam suspensions have improved RF performance drastically. In the 200-400 MHz range that this device is intended for, Q values are in excess of 100. In addition, an 8.4 to 1 tuning ratio has been achieved with continuous tuning over a 1.4 to 11.9 pF range. To further improve dynamic performance, devices were operated in a high viscosity gas environment and near critical damping was achieved.
  • Keywords
    Q-factor; UHF devices; adhesion; capacitors; micromechanical devices; tuning; 1.4 to 11.9 pF; 200 to 400 MHz; MEMS technology; RF applications; analog tunable capacitor; double beam suspensions; double-sided adhesive process; dynamic performance; high Q large tuning range capacitor; high viscosity gas environment; low resistivity silicon; near critical damping; thick device layers; tuning ratio; two-sided metal deposition; Aluminum; Bonding; Capacitors; Etching; Glass; Micromechanical devices; Radio frequency; Silicon devices; Suspensions; Tuning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-7185-2
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2002.984359
  • Filename
    984359