DocumentCode :
2255210
Title :
A novel single-layer bi-directional out-of-plane electrothermal microactuator
Author :
Wen-Chih Chen ; Jerwei Hsieh ; Weileun Fang
Author_Institution :
Dept. of Power Mech. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear :
2002
fDate :
24-24 Jan. 2002
Firstpage :
693
Lastpage :
697
Abstract :
In this study, a novel bi-directional out-of-plane electrothermal actuator is designed and fabricated. Unlike the bi-metal and hot-cold arm thermal actuator, this actuator can move in two directions. Since the actuator consists of only a single layer thin film material, it can prevent delamination. According to the static load-deflection test, this actuator can achieve bi-directional actuation with amplitude near several microns when driven at 5 V. According to the vibration test, the dynamics of the actuator are influenced not only by the thermal characteristics but also by the vibration modes. Consequently, the thermal actuator still has a significant output when driven near 40 kHz. The actuator was subjected to a fatigue test which shows that its resonant frequency remains unchanged after 10/sup 9/ cycles of continuous operation with driving voltage at 2.25 V/sub pp/.
Keywords :
dynamic testing; fatigue testing; frequency response; microactuators; micromechanical resonators; temperature distribution; thermal expansion; 2.25 V; 40 kHz; 5 V; bi-directional actuation; continuous operation; delamination prevention; driving voltage; fatigue test; resonant frequency; single layer thin film material; single-layer bi-directional out-of-plane electrothermal microactuator; static load-deflection test; thermal characteristics; two direction movement; vibration modes; vibration test; Actuators; Bidirectional control; Delamination; Electrothermal effects; Fatigue; Resonant frequency; Testing; Thermal loading; Transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
Conference_Location :
Las Vegas, NV, USA
ISSN :
1084-6999
Print_ISBN :
0-7803-7185-2
Type :
conf
DOI :
10.1109/MEMSYS.2002.984365
Filename :
984365
Link To Document :
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