Title :
Effect of the free carrier concentration on the escape time of excitons in quantum devices
Author :
Cruz, H. ; Hernandez-Cabrera, A. ; Aceituno, P.
Author_Institution :
Dept. de Fisica Fundamental y Exp., Univ. de La Laguna, Tenerife, Spain
Abstract :
We have studied the effect of the electronic many-body interaction and of an external field on the tunneling escape rate in double barrier devices. Lifetimes of photoexcited excitons in quantum wells have been obtained at different carrier sheet densities by solving self-consistently the time dependent Schrodinger and Poisson equations. Results showed that the excitonic escape time is strongly affected by the area free carrier density in the quantum well
Keywords :
Schrodinger equation; carrier density; excitons; many-body problems; quantum interference devices; semiconductor quantum wells; tunnelling; carrier sheet densities; double barrier devices; electronic many-body interaction; escape time; external field; free carrier concentration; photoexcited excitons; quantum devices; quantum wells; time dependent Poisson equation; time dependent Schrodinger equation; tunneling escape rate; Charge carrier density; Excitons; Helium; Phonons; Photoluminescence; Poisson equations; Resonant tunneling devices; Schrodinger equation; Spectroscopy; Wave functions;
Conference_Titel :
Frontiers in Electronics, 1997. WOFE '97. Proceedings., 1997 Advanced Workshop on
Conference_Location :
Puerto de la Cruz
Print_ISBN :
0-7803-4059-0
DOI :
10.1109/WOFE.1997.621156
