Title :
Modeling and simulating for IGBT based on PSIM
Author :
Haitao, Zhang ; Zhengming, Zhao
Author_Institution :
Dept. of Electr. Eng. & Appl. Electron. Technol., Tsinghua Univ., Beijing, China
Abstract :
A new simulating circuit model of IGBT based on PSIM has been developed. It mainly concerns the turn-on and -off characteristics of IGBT, and focuses on the peculiarities of the PN junction and the basic operating principle of IGBT. This model is built in terms of the basic structure of a physical IGBT. It can be used for various IGBTs by changing their basic parameters in the model. The simulation and experimental results show that this circuit simulating model emulates the dynamic characteristics of IGBT very well. And for its good performance in simulation accuracy and speed, it is proved to be very suitable for designing and analyzing converters based on IGBT.
Keywords :
circuit simulation; insulated gate bipolar transistors; p-n junctions; power engineering computing; IGBT; PN junction; PSIM; converter; simulating circuit model;
Conference_Titel :
Power Electronics and Motion Control Conference, 2004. IPEMC 2004. The 4th International
Conference_Location :
Xi´an
Print_ISBN :
7-5605-1869-9
