DocumentCode
2255402
Title
Novel high efficiency low ripple charge pump using variable frequency modulation
Author
Mingyang, Chen ; WuXiaobo ; Menglian, Zhao
Author_Institution
Inst. of VLSI Design, Zhejiang Univ., Hangzhou, China
fYear
2010
fDate
19-22 Dec. 2010
Firstpage
228
Lastpage
231
Abstract
A novel charge pump with variable frequency modulation (VFM) is proposed in this paper. To provide base for its design and improvement, detailed models for VFM charge pump are derived. And it is successfully implemented for the charge pump to introduce a voltage controlled oscillator (VCO) to control the switching frequency, which results in its high efficiency and low ripple output both at high load and light load. The chip is designed and fabricated in TSMC 0.35um mixed signal process. The simulation and test results show that high efficiency (up to 75%) and very low ripple output ( around 10 mV) is realized as expected. Besides, the accuracy of the model´s prediction is proved.
Keywords
charge pump circuits; frequency modulation; voltage-controlled oscillators; TSMC mixed signal process; high efficiency; low ripple charge pump; size 0.35 mum; switching frequency; variable frequency modulation; voltage controlled oscillator; charge pump; high efficiency; low ripple;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics (ICM), 2010 International Conference on
Conference_Location
Cairo
Print_ISBN
978-1-61284-149-6
Type
conf
DOI
10.1109/ICM.2010.5696124
Filename
5696124
Link To Document