Title :
Future trends of HBT technology for commercial and defense applications
Author :
Oki, A.K. ; Streit, D.C. ; Umemoto, D.K. ; Tran, L.T. ; Kobayashi, K.W. ; Yamada, F.M. ; Grossman, P.C. ; Block, T. ; Lammert, M.D. ; Olson, S.R. ; Cowles, J. ; Hoppe, M.M. ; Yang, L. ; Gutierrez-Aitken, A. ; Kagiwada, R.S. ; Nojima, S. ; Rezek, E.A. ; Pr
Author_Institution :
Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA
Abstract :
Heterojunction bipolar transistor (HBT) technology has been under development since the early 1980s. In the mid-1990s HBT technology has matured providing components for high volume low cost commercial wireless applications, as well as for high performance defense avionics, ground, and space applications. We discuss the status and future trends of HBT IC technology and production for defense and commercial applications, including advanced technology development, and comparison to MESFET, HEMT, and silicon based bipolar technology. Brief mention is made of power amplifiers and signal synthesizers.
Keywords :
bipolar digital integrated circuits; bipolar integrated circuits; bipolar transistor circuits; microwave generation; microwave integrated circuits; microwave power amplifiers; military equipment; technological forecasting; 20 GHz; HBT IC technology; HBT technology; advanced technology development; commercial applications; commercial wireless; defense applications; ground application; heterojunction bipolar transistor technology; power amplifiers; production; signal synthesizers; space applications; Aerospace electronics; Application specific integrated circuits; Bipolar integrated circuits; Costs; HEMTs; Heterojunction bipolar transistors; MESFET integrated circuits; Production; Silicon; Space technology;
Conference_Titel :
Wireless Applications Digest, 1997., IEEE MTT-S Symposium on Technologies for
Conference_Location :
Vancouver, BC, Canada
Print_ISBN :
0-7803-3318-7
DOI :
10.1109/MTTTWA.1997.595125
