Title :
Device characteristics of the SOI LIGBT with dual-epi layers
Author :
Kim, H.W. ; Kim, S.C. ; Seo, K.S. ; Bahng, W. ; Kim, E.D.
Author_Institution :
Adv. Mater. & Application Res. Laboratory, Korea Electrotechnology Res. Inst., Changwon, South Korea
Abstract :
On- and off-state characteristics of the LIGBT with dual-epi structure is presented. Trenched anode structure is employed to obtain uniform current flowlines, and shorted anode structure also employed to prevent the fast latch-up. The breakdown voltage of the proposed LIGBT with T/sub 1/=T/sub 2/= 2.5 /spl mu/m and N/sub 1/ = 7 /spl times/ 10/sup 15/ / cm/sup 3/ , N/sub 2/ =3 /spl times/ 10/sup 15//cm/sup 3/ is 125 V. SOA (safe operating area) of the proposed LIGBT is larger than that of the conventional one.
Keywords :
insulated gate bipolar transistors; silicon-on-insulator; 125 V; LIGBT; SOI; breakdown voltage; dual-epi layer; fast latch-up prevention; safe operating area; shorted anode structure; trenched anode structure; uniform current flowline;
Conference_Titel :
Power Electronics and Motion Control Conference, 2004. IPEMC 2004. The 4th International
Conference_Location :
Xi´an
Print_ISBN :
7-5605-1869-9
