Scaling issues for p-i-n carbon nanotube FETs: A computational study

Author

Ossaimee, Mahmoud ; Gamal, Salah

Author_Institution

Dept. of Eng. Phys. & Math., Ain Shams Univ., Cairo, Egypt

fYear

2010

fDate

19-22 Dec. 2010

Firstpage

240

Lastpage

243

Abstract

Scaling study of p-i-n carbon nanotube field effect transistors (CNTFETs) is presented through numerical simulations based on a quantum-mechanical simulator. This simulator is based on a self-consistent solution of Poisson´s equation and the carrier transport equation. Finite element method is used for solving Poisson´s equation while the non-equilibrium Green´s function (NEGF) formalism is used to model the carrier transport. The developed simulator is used to investigate the effects of the device parameters on the device performance.

Keywords

Green´s function methods; Poisson equation; carbon nanotubes; field effect transistors; finite element analysis; nanotube devices; CNTFET; NEGF formalism; Poisson´s equation; carrier transport equation; device parameters; device performance; finite element method; non-equilibrium Green´s function formalism; numerical simulations; p-i-n carbon nanotube FET; p-i-n carbon nanotube field effect transistors; quantum-mechanical simulator; scaling issues; self-consistent solution; CNTFETs; Doping; Logic gates; Mathematical model; PIN photodiodes; Tin; Tunneling; carbon nanotube FETs; nanoscale device modeling; non-equilibrium Green´s function; quantum transport;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (ICM), 2010 International Conference on

Conference_Location

Cairo

Print_ISBN

978-1-61284-149-6

Type

conf

DOI

10.1109/ICM.2010.5696127

Filename

5696127