Title :
Scaling issues for p-i-n carbon nanotube FETs: A computational study
Author :
Ossaimee, Mahmoud ; Gamal, Salah
Author_Institution :
Dept. of Eng. Phys. & Math., Ain Shams Univ., Cairo, Egypt
Abstract :
Scaling study of p-i-n carbon nanotube field effect transistors (CNTFETs) is presented through numerical simulations based on a quantum-mechanical simulator. This simulator is based on a self-consistent solution of Poisson´s equation and the carrier transport equation. Finite element method is used for solving Poisson´s equation while the non-equilibrium Green´s function (NEGF) formalism is used to model the carrier transport. The developed simulator is used to investigate the effects of the device parameters on the device performance.
Keywords :
Green´s function methods; Poisson equation; carbon nanotubes; field effect transistors; finite element analysis; nanotube devices; CNTFET; NEGF formalism; Poisson´s equation; carrier transport equation; device parameters; device performance; finite element method; non-equilibrium Green´s function formalism; numerical simulations; p-i-n carbon nanotube FET; p-i-n carbon nanotube field effect transistors; quantum-mechanical simulator; scaling issues; self-consistent solution; CNTFETs; Doping; Logic gates; Mathematical model; PIN photodiodes; Tin; Tunneling; carbon nanotube FETs; nanoscale device modeling; non-equilibrium Green´s function; quantum transport;
Conference_Titel :
Microelectronics (ICM), 2010 International Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-61284-149-6
DOI :
10.1109/ICM.2010.5696127
