Analytical model of an optically controlled DCFL inverter using normally-off MESFETs

Author

Bandhawakar, Garima ; Jit, S. ; Pal, B.B.

Author_Institution

Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India

Volume

2

fYear

2003

fDate

20-23 Sept. 2003

Firstpage

683

Abstract

An analytical model of an optically controlled DCFL (Direct Coupled Field Effect Transistor) inverter using normally off MESFET (E-MESFET) has been presented in this paper. An enhancement mode MESFET with a transparent/semi-transparent Schottky gate has been used as the switching transistor and an ungated MESFET has been used as the load of the inverter. The gate across the transistor is illuminated by optical radiation to develop a photovoltage at the Schottky junction which may be used to control it´s operation. The transfer characteristics of the inverter with fan out=0 and 1 have been presented under both the dark and illuminated conditions of the MESFET. The result demonstrates better performance under illumination as compared to that under dark condition.

Keywords

MESFET integrated circuits; direct coupled FET logic; field effect logic circuits; integrated optoelectronics; logic gates; Schottky junction; dark conditions; direct coupled field effect transistor; enhancement mode MESFET; field effect transistor logic; illuminated conditions; normally off MESFET; optically controlled DCFL inverter; optoelectronic integrated circuits; photovoltage; switching transistor; transfer characteristics; ungated MESFET load; Analytical models; FETs; Gallium arsenide; High speed optical techniques; Inverters; Lighting; Logic circuits; MESFETs; Optical control; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 2003. IMOC 2003. Proceedings of the 2003 SBMO/IEEE MTT-S International

Print_ISBN

0-7803-7824-5

Type

conf

DOI

10.1109/IMOC.2003.1242661

Filename

1242661