• DocumentCode
    2255657
  • Title

    Design and fabrication of 4H-SiC APD linear arrays

  • Author

    Yan, Feng ; Qin, Chao ; Zhao, Jian H. ; Bush, Mike ; Olsen, Gregory

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    17
  • Lastpage
    20
  • Abstract
    The photodetector linear array is an important technology for spectroscopic and imaging applications. In the visible blind UV region, 4H-SiC is a promising candidate for a linear array because of its high reliability and commercial availability of large area substrates. The 4H-SiC visible blind avalanche photodiodes (APDs) have been demonstrated, making it possible to demonstrate -visible blind APD linear array for applications where the UV signal is weak. In this paper, we present the detailed design and fabrication issues. Detailed characterizations results and suggestions for further improvement and potential applications are also presented.
  • Keywords
    arrays; avalanche photodiodes; photodetectors; silicon compounds; ultraviolet detectors; wide band gap semiconductors; 4H-SiC APD linear arrays; APD array characterization; APD linear array; SiC; UV avalanche photodiodes; fabrication; large area substrates; visible blind UV region; Availability; Avalanche photodiodes; Chaos; Fabrication; Fasteners; Optical imaging; Optical sensors; Photodetectors; Silicon carbide; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2001 International
  • Print_ISBN
    0-7803-7432-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2001.984428
  • Filename
    984428