DocumentCode
2255728
Title
An analysis of SEU robustness of C-element structures implemented in bulk CMOS and SOI technologies
Author
Al Tarawneh, Z. ; Russell, G. ; Yakovlev, A.
Author_Institution
Sch. of Electr., Electron. & Comput. Eng., Newcastle Univ., Newcastle upon Tyne, UK
fYear
2010
fDate
19-22 Dec. 2010
Firstpage
280
Lastpage
283
Abstract
Market place demands for higher performance and greater functionality per unit area have been the force driving down minimum feature sizes. However, several unintended consequences resulting from the advances in technology to address these market place demands has been an increase in the susceptibility of the circuits to SEUs and a growing uncertainty in the determination of timing parameters which is becoming detrimental to achieving timing closure. Some of the issues related to timing closure and the associated increase in power dissipation resulting from the increase in performance can be addressed through the adoption of an asynchronous design style. A logic element which is not only widely used but also peculiar to asynchronous design is the Muller C-element, which can be realised in a number of different configurations. In view of the increased susceptibility of logic elements to the effects of SEUs as device geometries are reduced this paper reports on the analysis of the robustness of various C-element configurations implemented in different technologies, to the effects of SEUs. It has been observed that of the static C-element configurations the symmetric C-element is the most robust.
Keywords
CMOS logic circuits; asynchronous circuits; silicon-on-insulator; C-element structures; Muller C-element; SEU robustness; SOI technologies; asynchronous design style; bulk CMOS technologies; logic element; power dissipation; single event upsets; timing parameters; MOS devices; Power demand; Robustness; Silicon; Single event upset; Threshold voltage; Transistors; C-element; process variation; silicon on insulator; single event upset;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics (ICM), 2010 International Conference on
Conference_Location
Cairo
Print_ISBN
978-1-61284-149-6
Type
conf
DOI
10.1109/ICM.2010.5696138
Filename
5696138
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