Title :
A highly efficient interleaved DC-DC converter using coupled inductors in gaas technology
Author :
Peng, Han ; Chow, T.P. ; Hella, Mona
Author_Institution :
ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
This paper presents a high power efficiency DC-DC buck converter in Gallium Arsenide technology targeting integrated power amplifier modules. The buck converter adopts an interleaved structure with negatively coupled inductors. Analysis of the effect of coupling on the steady state and transient response of the converter is given. The coupling factor is selected to achieve a maximum power efficiency for a given duty cycle with a minimum penalty on current ripple performance. The DC-DC converter is implemented in 0.5 mum GaAs pHEMT process and occupies 2.7times2.7 mm2 without the output network. It converts 4.5 V input to 3.3 V output for 1 A load current under 250 MHz switching frequency with a power efficiency of 86.1%.
Keywords :
DC-DC power convertors; III-V semiconductors; gallium arsenide; high electron mobility transistors; inductors; power amplifiers; GaAs; III-V technologies; coupled inductors; current 1 A; efficiency 86.1 percent; frequency 250 MHz; integrated power amplifier modules; interleaved DC-DC converter; pHEMT process; size 0.5 mum; voltage 3.3 V; voltage 4.5 V; CMOS technology; Coupling circuits; DC-DC power converters; Filters; Gallium arsenide; Inductors; Power amplifiers; Steady-state; Switching frequency; Voltage;
Conference_Titel :
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-3827-3
Electronic_ISBN :
978-1-4244-3828-0
DOI :
10.1109/ISCAS.2009.5117953
