Small-signal equivalent circuit parameters extracted from an "atomistic" simulation

We present results for intrinsic equivalent circuit elements of an AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) extracted from a two-dimensional "atomistic" hydrodynamic simulator. This simulator uses a discrete charge distribution instead of a uniform doping ("atomistic" model) and it accounts for hot-electrons effects, parasitic MESFET conduction, quantum effects, strain effects, and substrate injection. To our knowledge, it is the first time that small-signal equivalent circuit parameters are extracted using an "atomistic" simulator.