Oxide roughness enhanced reliability of MOS tunneling diodes

Author

Lin, C.-H. ; Lee, M.H. ; Hsu, B.-C. ; Chen, K.-F. ; Shie, C.-R. ; Liu, C.W.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2001

fDate

2001

Firstpage

46

Lastpage

49

Abstract

In this paper, we investigate the interface roughness effect on oxide degradation in MOS tunneling diodes. The ultrathin oxide reliability is enhanced by introducing oxide roughness, which is responsible for the reduction of impact electron/hole energy perpendicular to the Si/SiO₂ interface, and the decrease of the voltage acceleration factor. The rough oxide can be a novel technology to improve both the electrical and optical reliability of MOS devices

Keywords

MIS devices; elemental semiconductors; interface roughness; semiconductor device measurement; semiconductor device reliability; silicon; silicon compounds; tunnel diodes; MOS devices; MOS tunneling diodes; Si-SiO₂; Si/SiO₂ interface; impact electron/hole energy; interface roughness; optical reliability; oxide degradation; oxide roughness enhanced reliability; ultrathin oxide reliability; voltage acceleration factor; Degradation; Electrons; MOS devices; Rough surfaces; Scattering; Semiconductor diodes; Stress; Surface roughness; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984435

Filename

984435