Title :
Oxide roughness enhanced reliability of MOS tunneling diodes
Author :
Lin, C.-H. ; Lee, M.H. ; Hsu, B.-C. ; Chen, K.-F. ; Shie, C.-R. ; Liu, C.W.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
In this paper, we investigate the interface roughness effect on oxide degradation in MOS tunneling diodes. The ultrathin oxide reliability is enhanced by introducing oxide roughness, which is responsible for the reduction of impact electron/hole energy perpendicular to the Si/SiO2 interface, and the decrease of the voltage acceleration factor. The rough oxide can be a novel technology to improve both the electrical and optical reliability of MOS devices
Keywords :
MIS devices; elemental semiconductors; interface roughness; semiconductor device measurement; semiconductor device reliability; silicon; silicon compounds; tunnel diodes; MOS devices; MOS tunneling diodes; Si-SiO2; Si/SiO2 interface; impact electron/hole energy; interface roughness; optical reliability; oxide degradation; oxide roughness enhanced reliability; ultrathin oxide reliability; voltage acceleration factor; Degradation; Electrons; MOS devices; Rough surfaces; Scattering; Semiconductor diodes; Stress; Surface roughness; Tunneling; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984435
