Title :
Electron mobility in gate all around cylindrical silicon nanowires: A Monte Carlo study
Author :
Ossaimee, Mahmoud I. ; El-Sabagh, Mona ; Selim, Dalia ; Gamal, Salah H.
Author_Institution :
Dept. of Eng. Phys. & Math., Ain Shams Univ., Cairo, Egypt
Abstract :
Electron mobility in gated silicon nanowires is calculated using a Monte Carlo simulation that considers phonon and surface roughness scattering. Surface roughness scattering rates are calculated using Ando´s model. The eigenenergies and eigenfunctions required for scattering rate calculation are determined by self-consistent solution of the Schrödinger and Poisson equations. The effects of size quantization and transverse electric field on electron mobility are presented and discussed.
Keywords :
Monte Carlo methods; Poisson equation; Schrodinger equation; eigenvalues and eigenfunctions; electron mobility; elemental semiconductors; nanowires; phonons; semiconductor quantum wires; silicon; surface roughness; surface scattering; Ando model; Monte Carlo simulation; Poisson equation; Schrodinger equation; Si; eigenenergies; eigenfunctions; electron mobility; gate all around cylindrical silicon nanowires; phonon scattering; size quantization; surface roughness scattering; transverse electric field; Logic gates; Nanowires; Rough surfaces; Scattering; Silicon; Surface roughness; Wire; Mobility; Monte Carlo simulation; silicon nanowire;
Conference_Titel :
Microelectronics (ICM), 2010 International Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-61284-149-6
DOI :
10.1109/ICM.2010.5696144
