Title :
Photoinjection of hydrogen in solids: electron-proton plasma doping in transition metal oxides (WO3, MoO3,V2O5) and drastic enhancement of the print-out effect in silver and cuprous halides (AgCl, AgI, RbAg
Author_Institution :
A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
Abstract :
Photoinjection of hydrogen (PIH) can involve radical changes in many solids. To carry out the PIH a source of hydrogen atoms must be employed. Specially selected organic molecules containing an oxygen atom play the role of this source. Formation of the joint quantum mechanical assembly consisting of the solid and molecules (hydrogen donors) is achieved by adsorption of the molecules on the surface of the saturated transition metal oxides, e.g., WO3, MoO3,V2 O5. The idea is to excite the oxide surface by light illumination and transfer the excitation to the adsorbed molecule causing bond rupture and detachment of hydrogen atoms which then accommodate into the oxide structure
Keywords :
adsorption; halides; hydrogen; impurities; radiation effects; transition metal compounds; AgCl; AgI; CuCl; H; MoO3; RbAg4I5; V2O5; WO3; adsorption; cuprous halide; electron-proton plasma doping; hydrogen donor; hydrogen photoinjection; organic molecule; print-out effect; silver halide; transition metal oxide; Atomic measurements; Bonding; Charge carrier processes; Doping; Electrons; Hydrogen; Plasmas; Protons; Solids; Surface fitting;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984437